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QPD0010

Model Number: QPD0010

RF Power Transistor from Qorvo

RF Power Transistor, GaN, 2.5 to 2.7 GHz, 15 dB, 50.5 dBm, DFN, 7 x 6.5 mm

Status: Discontinued | Datasheet: Request Data Sheet | RoHS Compliance:

The QPD0010 is an asymmetric dual-path discrete GaN on SiC HEMT in a DFN package which operates from 2.5 to 2.7 GHz. In each path is a single-stage amplifier transistor. QPD0010 can deliver an average power of 15 W in a Doherty configuration.

Lead free and RoHS compliant.

Part Number: QPD0010
Manufacturer: Qorvo
Frequency Min: 2.5 GHz
Frequency Max: 2.7 GHz
Output Power: 15 W
Gain: 15 dB
% Typ Efficiency: 55
Supply Voltage: 48 V
Id: 65 mA
Package: 7.0X6.5mm DFN
Process: GaN
Type: RF Power Discrete Transistors

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Part Function	Part Number	Description
Replacement	QPB3810 Qorvo	RF Power Amplifier, GaN, 3.4 to 3.8 GHz, 8W, 48V, SMT 12 x 8 mm

Technical Inquiry Request for QPD0010 RF Power Transistor

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Product Specifications For QPD0010 RF Power Transistor

Part Number: QPD0010 Manufacturer: Qorvo Product Description: RF Power Transistor, GaN, 2.5 to 2.7 GHz, 15 dB, 50.5 dBm, DFN, 7 x 6.5 mm

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Description	Units Per Format	Available

Replacement Part(s) Suggested

The part QPD0010 is discontinued, below is the suggested replacement part.

Part Number	Manufacturer	Description
QPB3810	Qorvo	RF Power Amplifier, GaN, 3.4 to 3.8 GHz, 8W, 48V, SMT 12 x 8 mm

Description	Units Per Format	Available

The part QPD0010 is discontinued, would you like to check out the suggested replacement part?

Part Function	Part Number	Description
Replacement	QPB3810 Qorvo	RF Power Amplifier, GaN, 3.4 to 3.8 GHz, 8W, 48V, SMT 12 x 8 mm

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QPD0010

RF Power Transistor from Qorvo

RF Power Transistor, GaN, 2.5 to 2.7 GHz, 15 dB, 50.5 dBm, DFN, 7 x 6.5 mm

Technical Inquiry Request for QPD0010 RF Power Transistor

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QPD0010

RF Power Transistor from Qorvo

RF Power Transistor, GaN, 2.5 to 2.7 GHz, 15 dB, 50.5 dBm, DFN, 7 x 6.5 mm

Technical Inquiry Request for QPD0010 RF Power Transistor

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